Molecular Beam Epitaxy (MBE) is a highly precise technique for growing thin films, widely used in semiconductor fabrication, nanotechnology, and material science research. One of the most crucial elements of the MBE process is the quality of the vacuum environment in which it takes place.
MBE requires an ultra-high vacuum (UHV) chamber, where the pressure is kept extremely low, typically around 10⁻¹⁰ torr. The ability to maintain such a pristine environment is vital to achieving high-quality film growth and ensuring material purity. In this blog, we’ll explore why vacuum quality is so essential in MBE systems and how it directly impacts the success of the process.
